標題: A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current
作者: Yen, ST
Lee, CP
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1996
摘要: A novel cladding structure is proposed and analyzed for semiconductor quantum-well lasers ttl achieve a small vertical-beam divergence and a low threshold current density simultaneously, This cladding structure is designed to guide a wide optical mode but with a high peak intensity in quantum wells. The wide expansion of the optical mode results in a small beam divergence. In addition, the high optical intensity in quantum wells causes a low threshold current density, This novel cladding structure is optimized. The result shows that this type of cladding structures can achieve a beam divergence as small as 14.6 degrees while the threshold current density remains small.
URI: http://dx.doi.org/10.1109/3.535363
http://hdl.handle.net/11536/1089
ISSN: 0018-9197
DOI: 10.1109/3.535363
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 32
Issue: 9
起始頁: 1588
結束頁: 1595
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VF78200009.pdf