|Title:||Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks|
Huang, C. S.
Chen, C. W.
Department of Photonics
Institute of Display
|Abstract:||Nonvolatile memory devices with oxide-nitride-oxide stack structures were fabricated on glass substrates using low-temperature polycrystalline silicon technology. The Fowler-Nordheim tunneling scheme is more suitable than channel hot carrier injection for the programming of the polycrystalline silicon nonvolatile memory device. A memory window of 1.5 V can be obtained at a programming voltage of 20 V. After 10(4) programming/erasing cycles, a threshold voltage shift of 1.5 V is maintained. Furthermore, the proposed memory device exhibits good retention for 50 h at 60 degrees C without a significant decline in the memory window. (C) 2007 American Institute of Physics.|
|Journal:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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