Title: Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks
Authors: Liu, Po-Tsun
Huang, C. S.
Chen, C. W.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
Issue Date: 30-Apr-2007
Abstract: Nonvolatile memory devices with oxide-nitride-oxide stack structures were fabricated on glass substrates using low-temperature polycrystalline silicon technology. The Fowler-Nordheim tunneling scheme is more suitable than channel hot carrier injection for the programming of the polycrystalline silicon nonvolatile memory device. A memory window of 1.5 V can be obtained at a programming voltage of 20 V. After 10(4) programming/erasing cycles, a threshold voltage shift of 1.5 V is maintained. Furthermore, the proposed memory device exhibits good retention for 50 h at 60 degrees C without a significant decline in the memory window. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2736293
http://hdl.handle.net/11536/10881
ISSN: 0003-6951
DOI: 10.1063/1.2736293
Journal: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 18
End Page: 
Appears in Collections:Articles


Files in This Item:

  1. 000246210000081.pdf