標題: A reliability model for low-temperature polycrystalline silicon thin-film transistors
作者: Chen, Chih-Yang
Lee, Jam-Wem
Lee, Po-Hao
Chen, Wei-Cheng
Lin, Hsiao-Yi
Yeh, Kuan-Lin
Ma, Ming-Wen
Wang, Shen-De
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot carrier stress (HCS);low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs);negative bias temperature instability (NBTI);reliability
公開日期: 1-May-2007
摘要: We proposed here a reliability model that successfully. introduces both the physical mechanisms of negative bias temperature instability (NBTI) and hot carrier stress (HCS) for p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The proposed model is highly matched with the experimental results, in which the NBTI dominates the device reliability at small negative drain bias while the HCS dominates the degradation at large negative drain bias. In summary, the proposed model provides a comprehensive way to predict the lifetime of the p-channel LTPS TFTs, which is especially necessary for the system-on-panel circuitry design.
URI: http://dx.doi.org/10.1109/LED.2007.895454
http://hdl.handle.net/11536/10864
ISSN: 0741-3106
DOI: 10.1109/LED.2007.895454
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 5
起始頁: 392
結束頁: 394
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