標題: Ka-band 0.18 mu m CMOS low noise amplifier with 5.2 dB noise figure
作者: Chang, Win-Ming
Hsiung, Zi-Hao
Jou, Christina F.
電信工程研究所
Institute of Communications Engineering
關鍵字: Ka-band;LNA;CMOS
公開日期: 1-May-2007
摘要: A Ka-band low noise amplifier (LNA) using three cascaded stages was designed and implemented in a standard 0.18 Pun CMOS technology. The fabricated Ka-band LNA achieves power gain (S21) above 12 dB from 30 to 32 GHz and a minimal noise figure of 5.2 dB at 31.5 GHz. The three cascaded stages LNA consume 15.58 mA from I V power supply. Compared with the recent published literatures, this LNA operates at the highest frequency ever reported by standard bulk 0.18 mu m CMOS process. (c) 2007 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.22383
http://hdl.handle.net/11536/10861
ISSN: 0895-2477
DOI: 10.1002/mop.22383
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 49
Issue: 5
起始頁: 1187
結束頁: 1189
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