Title: Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
Authors: Lin, Chih-Yang
Wu, Chen-Yu
Wu, Chung-Yi
Lee, Tzyh-Cheang
Yang, Fu-Liang
Hu, Chenming
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: nonvolatile memory;resistive random access memory (RRAM);resistive switching;ZrO2
Issue Date: 1-May-2007
Abstract: The influence of top electrode material on the resistive switching properties of ZrO2 -based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO2/Pt and Al/ZrO2/Pt devices, the Ti/ZrO2/Pt device exhibits different resistive switching current-voltage (I-V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO2/Pt and Al/ZrO2/Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 104 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles.
URI: http://dx.doi.org/10.1109/LED.2007.894652
http://hdl.handle.net/11536/10849
ISSN: 0741-3106
DOI: 10.1109/LED.2007.894652
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 5
Begin Page: 366
End Page: 368
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