標題: High-gain high-isolation CMFB stacked-LO subharmonic Gilbert mixer using SiGe BiCMOS technology
作者: Wu, T. H.
Meng, C. C.
Huang, G. W.
電信工程研究所
Institute of Communications Engineering
關鍵字: subharmonic mixer;stacked-LO-stage;SiGe heterojunction;bipolar transistor (HBT);2LO-RF isolation;Gilbert mixer
公開日期: 1-May-2007
摘要: A 5.2-GHz SiGe BiCMOS stacked-LO-stage CMFB (common made feedback) subharmonic mixer is demonstrated in this article. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation. (c) 2007 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.22398
http://hdl.handle.net/11536/10834
ISSN: 0895-2477
DOI: 10.1002/mop.22398
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 49
Issue: 5
起始頁: 1214
結束頁: 1216
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