標題: Characteristics of self-aligned Si/Ge T-gate poly-Si thin-film transistors with high ON/OFF current ratio
作者: Kuo, Po-Yi
Chao, Tien-Sheng
Hsieh, Pei-Shan
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium;ON/OFF current ratio;polycrystalline silicon thin-film transistors (poly-Si TFTs);self-aligned;Si/Ge T-gate
公開日期: 1-五月-2007
摘要: In this paper, we have successfully developed and fabricated self-aligned Si/Ge T-gate poly-Si thin-film transistors (Si/Ge T-gate TFTs) with a thick gate oxide at the gate edges near the source and drain for the first time. The Si/Ge T-gate was formed by selective wet etching of Ge gate layer. The thick gate oxide layer at the gate edges and passivation oxide layer were deposited simultaneously in passivation process. The thick gate oxide at the gate edges effectively reduces the drain vertical and lateral electric fields without additional mask, lightly doped drain, spacer, or subgate bias. The Si/Ge T-gate TFTs not only,reduce the OFF-state leakage current but also maintain a high ON-state current. Experimental results show that the Si/Ge T-gate TFTs have low OFF-state leakage currents, improved ON/OFF current ratio, and more saturated output characteristics compared with conventional TFTs.
URI: http://dx.doi.org/10.1109/TED.2007.894604
http://hdl.handle.net/11536/10829
ISSN: 0018-9383
DOI: 10.1109/TED.2007.894604
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 54
Issue: 5
起始頁: 1171
結束頁: 1176
顯示於類別:期刊論文


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  1. 000246033700032.pdf