標題: Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor
作者: Wang, M. C.
Chang, T. C.
Liu, Po-Tsun
Tsao, S. W.
Chen, J. R.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 7-May-2007
摘要: The photo-leakage-current (I-PLC) characteristic of F incorporated a-Si:H thin film transistor (TFT) has been studied. The device activation energy (E-a) of a-Si:H(:F) TFTs is higher than those of typical a-Si:H TFTs, and resulted in the shift down of Fermi level in a-Si:H(:F). Experimental results show that the I-PLC of a-Si:H(:F) TFTs is smaller than that of conventional a-Si:H TFTs in the density of states limited region, stemmed from the higher recombination centers present in a-Si:H(:F) material. However, the higher I-PLC is observed in the hole conduction region, resulted from the larger E-a in the a-Si:H(:F) TFTs. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2738192
http://hdl.handle.net/11536/10807
ISSN: 0003-6951
DOI: 10.1063/1.2738192
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 19
結束頁: 
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