標題: High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
作者: Kao, Chia-Chun
Lin, Pang
Lee, Cheng-Chung
Wang, Yi-Kai
Ho, Jia-Chong
Shen, Yu-Yuan
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 21-May-2007
摘要: N,N-bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6x10(-2) cm(2) V-1 s(-1), the threshold voltage (V-T) was +5.5 V, and the on/off current ratio was 8.6x10(5). Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift (Delta V-T) was verified by gate bias stress measurements. A prototype compound, N,N-bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2741414
http://hdl.handle.net/11536/10787
ISSN: 0003-6951
DOI: 10.1063/1.2741414
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 21
結束頁: 
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