標題: Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
作者: Yang, F. M.
Chang, T. C.
Liu, P. T.
Chen, U. S.
Yeh, P. H.
Yu, Y. C.
Lin, J. Y.
Sze, S. M.
Lou, J. C.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 28-May-2007
摘要: A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9x10(12)/cm(2), respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 10(6) write/erase cycles. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2743926
http://hdl.handle.net/11536/10782
ISSN: 0003-6951
DOI: 10.1063/1.2743926
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 22
結束頁: 
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