Full metadata record
DC FieldValueLanguage
dc.contributor.authorLin, Yen-Fuen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorWang, C. P.en_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.contributor.authorWu, Zhong-Yien_US
dc.contributor.authorChen, Fu-Rongen_US
dc.contributor.authorKai, Ji-Jungen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-08T15:14:01Z-
dc.date.available2014-12-08T15:14:01Z-
dc.date.issued2007-05-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2745648en_US
dc.identifier.urihttp://hdl.handle.net/11536/10780-
dc.description.abstractSingle crystalline ZnO nanowires (NWs) with a circular cross section and similar to 40 nm in diameter have been synthesized and utilized to fabricate two-contact ZnO NW devices. The electrical properties of the NW devices can be categorized into two classes according to the magnitude of their room-temperature resistances. I-V curves of low-resistance devices exhibit downward bending features and their temperature dependent resistances demonstrate thermal activation transport in the ZnO NWs. The high-resistance NW devices can be modeled as back-to-back Schottky contacts and the electron transport through the contacts reveals a variable-range-hopping mechanism. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleContact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross sectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2745648en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue22en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000246909900076-
dc.citation.woscount25-
Appears in Collections:Articles


Files in This Item:

  1. 000246909900076.pdf