標題: Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section
作者: Lin, Yen-Fu
Jian, Wen-Bin
Wang, C. P.
Suen, Yuen-Wuu
Wu, Zhong-Yi
Chen, Fu-Rong
Kai, Ji-Jung
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 28-May-2007
摘要: Single crystalline ZnO nanowires (NWs) with a circular cross section and similar to 40 nm in diameter have been synthesized and utilized to fabricate two-contact ZnO NW devices. The electrical properties of the NW devices can be categorized into two classes according to the magnitude of their room-temperature resistances. I-V curves of low-resistance devices exhibit downward bending features and their temperature dependent resistances demonstrate thermal activation transport in the ZnO NWs. The high-resistance NW devices can be modeled as back-to-back Schottky contacts and the electron transport through the contacts reveals a variable-range-hopping mechanism. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2745648
http://hdl.handle.net/11536/10780
ISSN: 0003-6951
DOI: 10.1063/1.2745648
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 22
結束頁: 
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