標題: Optical and mechanical properties of reactively sputtered silicon dioxide films
作者: Wu, WF
Chiou, BS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1996
摘要: The reactive sputtering method, using an Ar/O-2 mixture, was applied to deposit silicon dioxide film. Both x-ray photoemission spectroscopy (XPS) and infrared absorption spectroscopy were employed to evaluate the structure of SiO2 films sputtered at various oxygen percentages. The optical and mechanical properties of SiO2 films on glass substrates were investigated. Films prepared at a higher oxygen content have a higher density and a higher refractive index.
URI: http://dx.doi.org/10.1088/0268-1242/11/9/012
http://hdl.handle.net/11536/1078
ISSN: 0268-1242
DOI: 10.1088/0268-1242/11/9/012
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 11
Issue: 9
起始頁: 1317
結束頁: 1321
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VH30100012.pdf