標題: RF power performance of asymmetric-LDD MOS transistor for RF-CMOS SOC design
作者: King, Ming-Chu
Chang, Tsu
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: lightly-doped-drain (LDD);metal oxide semiconductor field effect transistor (MOSFET);metal oxide semiconductor (MOS) transistor;radio frequency (RF) power transistor
公開日期: 1-Jun-2007
摘要: This letter presents a new asymmetric-lightly-doped-drain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance by this new MOS transistor make the RF-CMOS system-on-chip design a step further.
URI: http://dx.doi.org/10.1109/LMWC.2007.897796
http://hdl.handle.net/11536/10776
ISSN: 1531-1309
DOI: 10.1109/LMWC.2007.897796
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 17
Issue: 6
起始頁: 445
結束頁: 447
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