標題: Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs
作者: Yang, Hung-Pin D.
Hsu, I-Chen
Lai, Fang-I
Lin, Gray
Hsiao, Ru-Shang
Maleev, Nikolai A.
Blokhin, Sergej A.
Kuo, Hao-Chung
Chi, Jim Y.
光電工程學系
Department of Photonics
公開日期: 1-Jun-2007
摘要: An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiberoptic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.optcom.2007.01.063
http://hdl.handle.net/11536/10743
ISSN: 0030-4018
DOI: 10.1016/j.optcom.2007.01.063
期刊: OPTICS COMMUNICATIONS
Volume: 274
Issue: 1
起始頁: 94
結束頁: 99
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