標題: High brightness GaN-based light-emitting diodes
作者: Lee, Ya-Ju
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: extraction quantum efficiency;GaN;internal quantum efficiency;light-emitting diodes (LEDs)
公開日期: 1-Jun-2007
摘要: This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.
URI: http://dx.doi.org/10.1109/JDT.2007.894380
http://hdl.handle.net/11536/10741
ISSN: 1551-319X
DOI: 10.1109/JDT.2007.894380
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 3
Issue: 2
起始頁: 118
結束頁: 125
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