|Title:||Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers|
|Authors:||Yang, Hung-Pin D.|
Chi, Jim Y.
Department of Photonics
|Abstract:||We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.|
|Journal:||JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS|
|Appears in Collections:||Articles|
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