Title: Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
Authors: Yang, Hung-Pin D.
Chen, I-Liang
Lee, Chen-Hong
Chiou, Chih-Hong
Lee, Tsin-Dong
Hsu, I-Chen
Lai, Fang-I
Lin, Gray
Kuo, Hao-Chung
Chi, Jim Y.
光電工程學系
Department of Photonics
Keywords: InGaAs;highly strained;VCSEL
Issue Date: 1-Jun-2007
Abstract: We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
URI: http://dx.doi.org/10.1143/JJAP.46.L509
http://hdl.handle.net/11536/10720
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.L509
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 46
Issue: 20-24
Begin Page: L509
End Page: L511
Appears in Collections:Articles


Files in This Item:

  1. 000247828600012.pdf