標題: Vertical-channel organic thin-film transistors with meshed electrode and low leakage current
作者: Zan, Hsiao-Wen
Yen, Kuo-Hsi
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: OTFT;pentacene;vertical channel;meshed electrode
公開日期: 1-六月-2007
摘要: In this study, we have successfully fabricated vertical-channel organic thin-film transistors with a channel length smaller than 100nm. It is found that Fowler-Nordheim tunneling is the dominant mechanism determining the ultra short-channel device behavior. To improve the gate control capability, a meshed source electrode pad had been used. This significantly lowers the gate and drain driving voltages (<10V), improves the saturation characteristics and reduces the leakage current. The improvement may be due to the fringing field around the source electrode, which suppresses the tunneling effect.
URI: http://dx.doi.org/10.1143/JJAP.46.3315
http://hdl.handle.net/11536/10719
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.3315
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 6A
起始頁: 3315
結束頁: 3318
顯示於類別:期刊論文


文件中的檔案:

  1. 000247493000007.pdf