標題: Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes
作者: Wu, Yewchung Sermon
Cheng, Ji-Hao
Peng, Wei Chih
Ouyang, Hao
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 18-Jun-2007
摘要: The KrF pulsed excimer laser (248nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355nm) have been used to separate GaN thin films from sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes were studied. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2749866
http://hdl.handle.net/11536/10679
ISSN: 0003-6951
DOI: 10.1063/1.2749866
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 25
結束頁: 
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