標題: Fabrication of microcavity light-emitting diodes using highly reflective AlN-GaN and Ta2O5-SiO2 distributed Bragg mirrors
作者: Huang, G. S.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
Chen, Hou-Guang
光電工程學系
Department of Photonics
關鍵字: distributed Bragg reflector (DBR);GaN;microcavity light-emitting diode (MCLED)
公開日期: 1-Jul-2007
摘要: We report the fabrication of microcavity light-emitting diodes (MCLEDs) with high reflectivity and crack-free AIN-GaN distributed Bragg reflector (DBR). The 5 lambda microcavity structure consists of an n-type GaN, ten pairs InGaN-GaN multiple quantum wells and p-type GaN sandwiched between the hybrid cavity mode of an AIN-GaN and a Ta2O5-SiO2 DBR. The AIN-GaN DBR has 29 periods with insertion of six AIN-GaN superlattice layers showing a crack-free surface morphology and a high peak reflectivity of 99.4% with a stopband of 21 nm. The output power of MCLED is about 11 mu W at an injection current of 7 mA. The electroluminescence has a polarization property with a degree of polarization of about 51 %.
URI: http://dx.doi.org/10.1109/LPT.2007.898763
http://hdl.handle.net/11536/10641
ISSN: 1041-1135
DOI: 10.1109/LPT.2007.898763
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 19
Issue: 13-16
起始頁: 999
結束頁: 1001
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