標題: DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
作者: Shiu, J. Y.
Desmaris, V.
Rorsman, N.
Kumakura, K.
Makimoto, T.
Zirath, H.
Chang, E. Y.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jul-2007
摘要: The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiNx passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The pulsed I - V characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiNx passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiNx passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm(-1) at V-gs=- 4 V, V-ds = 50 V and a maximum power added efficiency of 51.3% at V-gs=- 4 V, V-ds = 30 V at 3 GHz on 2 x 50 mu m AlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 mu m and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency (f(t)) and maximum oscillation frequency (f(max)) are 51 GHz and 100 GHz, respectively, on 2 x 50 x 0.15 mu m HEMTs. To our knowledge, the sputtered SiNx passivation for AlGaN/GaN HEMTs is a unique technique, which has never been published before.
URI: http://dx.doi.org/10.1088/0268-1242/22/7/007
http://hdl.handle.net/11536/10636
ISSN: 0268-1242
DOI: 10.1088/0268-1242/22/7/007
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 22
Issue: 7
起始頁: 717
結束頁: 721
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