標題: High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization
作者: Tsai, Chun-Chien
Chen, Hsu-Hsin
Chen, Bo-Ting
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: bottom gate (BG);excimer laser crystallization (ELC);lateral grain growth;self-aligned (SA);thin-film transistor (TFT)
公開日期: 1-Jul-2007
摘要: In this letter, high-performance bottom-gate (BG) low-temperature poly-silicon thin-film transistors (TFTs) with excimer laser crystallization have been demonstrated using self-aligned (SA) backside photolithography exposure. The grains with lateral grain size of about 0.75 mu m could be artificially grown in the channel region via the super-lateral-growth phenomenon fabricated by excimer laser irradiation. Consequently, SA-BG TFTs with the channel length of 1 pm exhibited field-effect mobility reaching 193 cm(2)/V center dot s without hydrogenation, while the mobility of the conventional non-SA-BG TFT and conventional SA top-gate one were about 17.8 and 103 cm(2)/V center dot s, respectively. Moreover, SA-BG TFTs showed higher device uniformity and wider process window owing to the homogenous lateral grains crystallized from the channel steps near the BG edges.
URI: http://dx.doi.org/10.1109/LED.2007.899326
http://hdl.handle.net/11536/10630
ISSN: 0741-3106
DOI: 10.1109/LED.2007.899326
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 7
起始頁: 599
結束頁: 602
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