標題: Electrical properties of ZnO varistors prepared by microwave sintering process
作者: Chen, CS
Kuo, CT
Lin, IN
機械工程學系
材料科學與工程學系
Department of Mechanical Engineering
Department of Materials Science and Engineering
關鍵字: ZnO varistor;microwave sintering;densification rate;degradation;barrier height
公開日期: 1-九月-1996
摘要: Microwave sintering processes were observed to substantially enhance the densification rate for ZnO varistor materials. Samples microwave sintered at 900-1200 degrees C for 10 min reached the same high density as those conventionally sintered at the same temperature for 60 min. A similar tendency was observed for the grain size. Prolonged microwave sintering, however, resulted in fast grain growth and degraded electric field-current density (E-J) properties. Capacitance-voltage (C-V) analysis indicated that the degradation in E-J behavior primarily resulted from the decrease in grain boundary barrier height. The modification of the grain boundary electrical properties, in turn, is ascribed to the loss of volatile Bi species along the grain boundaries.
URI: http://dx.doi.org/10.1143/JJAP.35.4696
http://hdl.handle.net/11536/1060
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.4696
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 9A
起始頁: 4696
結束頁: 4703
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VK79500023.pdf