標題: Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films
作者: Chien, Chi-Hui
Jian, Sheng-Rui
Wang, Chung-Ting
Juang, Jenh-Yih
Huang, J. C.
Lai, Yi-Shao
電子物理學系
Department of Electrophysics
公開日期: 7-Jul-2007
摘要: Nanoindentation-induced mechanical deformation in GaN thin films prepared by metal-organic chemical-vapour deposition was investigated using the Berkovich diamond tip in combination with the cross-sectional transmission electron microscopy (XTEM). By using focused ion beam milling to accurately position the cross-section of the indented region, the XTEM results demonstrate that the major plastic deformation was taking place through the propagation of dislocations. The present observations are in support of attributing the pop-ins that appeared in the load-displacement curves to the massive dislocation activities occurring underneath the indenter during the loading cycle. The absence of indentation-induced new phases might have been due to the stress relaxation via the substrate and is also consistent with the fact that no discontinuity was found upon unloading.
URI: http://dx.doi.org/10.1088/0022-3727/40/13/011
http://hdl.handle.net/11536/10570
ISSN: 0022-3727
DOI: 10.1088/0022-3727/40/13/011
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 40
Issue: 13
起始頁: 3985
結束頁: 3990
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