標題: n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal
作者: Wang, M. C.
Chang, T. C.
Liu, Po-Tsun
Xiao, R. W.
Lin, L. F.
Li, Y. Y.
Yeh, F. S.
Chen, J. R.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 9-Jul-2007
摘要: The feasibility of using CuMg as source/drain metal electrodes for n(+)-doped-layer-free microcrystalline silicon thin film transistors (mu-Si:H TFTs) has been investigated. The Ohmic-contact characteristic has been achieved by using the CuMg alloy as source/drain metal. Furthermore, a wet etching process of Cu alloy source/drain metal has been completed by using the ferric chloride base etchant. The proposed mu-Si:H TFT has shown similar electrical characteristic with the mu-Si:H TFT with n(+)-doped layer. The experimental result also showed that the CuMg alloy was suitable for the replacement of n(+)-doped layer in thin film transistor liquid-crystal displays. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2749847
http://hdl.handle.net/11536/10569
ISSN: 0003-6951
DOI: 10.1063/1.2749847
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 2
結束頁: 
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