Title: Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates
Authors: Chen, Hou-Guang
Ko, Tsung-Shine
Ling, Shih-Chun
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Wu, Yue-Han
Chang, Li
Department of Materials Science and Engineering
Department of Photonics
Issue Date: 9-Jul-2007
Abstract: Extended defect reduction in GaN can be achieved via direct growth on stripe patterned (1(-)1 02) r-plane sapphire substrates by metal organic chemical vapor deposition. The striped mesa is along [11 (-)2 0] with two etched sides in {0001} and {1 (-)1 01} faces. GaN grown on both etched facets in epitaxy exhibit different crystallographic relationships with sapphire substrate which are (1 (-)1 02)(sapphire)parallel to(11 (-)2 0)(GaN) and [11 (-)2 0](sapphire)parallel to[ (-)1 100](GaN), and (0001)(sapphire)parallel to(0001)(GaN) and [11 (-)2 0](sapphire)parallel to[ (-)1 100](GaN), respectively. The dislocation densities can be significantly reduced through epitaxial growth on the inclined lateral faces of mesas. Dislocation density in the order of similar to 10(7) cm(-2) can be achieved in the tilted GaN. (C) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2754643
ISSN: 0003-6951
DOI: 10.1063/1.2754643
Volume: 91
Issue: 2
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