標題: INTERCONNECT OF GROUP III- V SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR MAKING THE SAME
作者: Lee, Cheng-Shih
Chang, Edward Yi
Chang, Huang-Choung
公開日期: 22-Feb-2007
摘要: An interconnect of the group III-V semiconductor device and the fabrication method for making the same are described. The interconnect includes a first adhesion layer, a diffusion barrier layer for preventing the copper from diffusing, a second adhesion layer and a copper wire line. Because a stacked-layer structure of the first adhesion layer/diffusion barrier layer/second adhesion layer is located between the copper wire line and the group III-V semiconductor device, the adhesion between the diffusion barrier layer and other materials is improved. Therefore, the yield of the device is increased.
官方說明文件#: H01L023/52
H01L023/48
H01L029/40
URI: http://hdl.handle.net/11536/105673
專利國: USA
專利號碼: 20070040274
Appears in Collections:Patents


Files in This Item:

  1. 20070040274.pdf