Title: A process for high yield and high performance carbon nanotube field effect transistors
Authors: Lee, Tseng-Chin
Tsui, Bing-Yue
Tzeng, Pei-Jer
Wang, Ching-Chiun
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-May-2010
Abstract: Carbon nanotube field effect transistors (CNTFETs) have been considered as one of the potential candidates for nanoelectronics beyond Si CMOS. However, it is not easy to have high performance CNTFETs with high yield currently. In this work, we proposed a local bottom-gate (LBG) CNTFETs combined with a novel device concept and optimized process technologies. High performance of CNTFET with low subthreshold swing of 139 mV/dec, high transconductance of 1.27 mu S, and high I(on)/I(off) ratio of 10(6) can be easily obtained with Ti source/drain contact after a post annealing process. Record high yield of 74% has been demonstrated. On the basis of the proposed process, lots of high performance CNTFETs can be obtained easily for advanced study on the electrical characteristics of CNTFETs in the future. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2010.01.008
http://hdl.handle.net/11536/10566
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.01.008
Journal: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 5
Begin Page: 666
End Page: 669
Appears in Collections:Conferences Paper


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