標題: Copper metalized ohmic contact electrode of compound device
作者: Lee, Cheng-Shih
Chang, Edward Yi
Chen, Ke-Shian
公開日期: 12-Jul-2007
摘要: The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.
官方說明文件#: H01L023/48
URI: http://hdl.handle.net/11536/105645
專利國: USA
專利號碼: 20070158844
Appears in Collections:Patents


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  1. 20070158844.pdf