標題: Etching method for nitride semiconductor
作者: Lee, Wei-I
Huang, Hsin-Hsiung
Zeng, Hung-Yu
公開日期: 5-Mar-2009
摘要: The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric layer is used as the mask for the epitaxial lateral overgrowth of follow-up gallium nitride layer. The thick gallium nitride film is grown on the dielectric layer. Then the wet etching process is used to remove the dielectric layer, and the thick gallium nitride film on the dielectric layer is etched to form the specific shape as required.
官方說明文件#: H01L021/311
URI: http://hdl.handle.net/11536/105540
專利國: USA
專利號碼: 20090061636
Appears in Collections:Patents


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  1. 20090061636.pdf