標題: Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate
作者: Chang, Chun-Yen
Yang, Tsung-Hsi
Shen, Shih-Guo
公開日期: 16-Apr-2009
摘要: GaN layer on semiconductor substrate is grown by using GaN nanorod buffer layer. Firstly, semiconductor substrate is cleaned and thermally degassed to remove the contaminant in the growth chamber. After the above step, the GaN nanorods layer is grown under the N-rich condition. Then, GaN epilayer is overgrown on the GaN nanorods layer under the Ga-rich condition for forming Group of III-Nitrides semiconductor layer on the semiconductor substrate.
官方說明文件#: H01L021/205
URI: http://hdl.handle.net/11536/105534
專利國: USA
專利號碼: 20090098714
Appears in Collections:Patents


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