標題: Super leakage current cut-off device for ternary content addressable memory
作者: Huang, Po-Tsang
Liu, Wen-Yen
Hwang, Wei
公開日期: 25-Jun-2009
摘要: A super leakage current cut-off device for a ternary content addressable memory (TCAM) is provided. For various operations of the TCAM, the device uses the high-end and low-end power gating control transistors to turn on/off the don't-care cells to reduce the leakage current passing through the don't-care cells.
官方說明文件#: G11C015/00
G11C005/14
URI: http://hdl.handle.net/11536/105518
專利國: USA
專利號碼: 20090161399
Appears in Collections:Patents


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  1. 20090161399.pdf