標題: Lasing characteristics of a GaN photonic crystal nanocavity light source
作者: Lai, Chun-Feng
Yu, Peichen
Wang, Te-Chung
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Lee, Chao-Kuei
光電工程學系
Department of Photonics
公開日期: 23-Jul-2007
摘要: Lasing characteristics from photonic crystal defects fabricated on bulk GaN are investigated. The device demonstrates multimode lasing with linewidths as narrow as 2-3 angstrom, and an enhanced spontaneous emission factor beta similar to 0.045. The emission spectra indicate that the laser emission is initiated horizontally in the defect nanocavity and then coupled to the vertical radiation, possibly via photonic crystal Bloch modes or by scattering.
URI: http://dx.doi.org/10.1063/1.2759467
http://hdl.handle.net/11536/10549
ISSN: 0003-6951
DOI: 10.1063/1.2759467
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 4
結束頁: 
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