標題: Suspended nanochannel transistor structure and method for fabricating the same
作者: Lin, Horng-Chin
Su, Chun-Jung
Hsu, Hsing-Hui
Li, Guan-Jang
公開日期: 22-Apr-2010
摘要: The present invention discloses a suspended nanochannel transistor structure and a method for fabricating the same. The transistor structure of the present invention comprises a substrate; a side gate formed on the substrate; a dielectric layer covering the substrate and the side gate; a suspended nanochannel formed beside the lateral of the side gate with an air gap existing between the suspended nanochannel and the dielectric layer; a source and a drain formed over the dielectric layer and respectively arranged at two ends of the suspended nanochannel. The electrostatic force of the side gate attracts or repels the suspended nanochannel and thus fast varies the equivalent thickness of the side-gate dielectric layer. Thereby, the on/off state of the element is rapidly switched, or the initial voltage of the channel is altered.
官方說明文件#: H01L023/482
H01L021/336
G11C011/34
URI: http://hdl.handle.net/11536/105419
專利國: USA
專利號碼: 20100096704
Appears in Collections:Patents


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  1. 20100096704.pdf