標題: Dual-threshold-voltage two-port sub-threshold SRAM cell apparatus
作者: Chang, Mu-Tien
Huang, Po-Tsang
Hwang, Wei
公開日期: 8-Jul-2010
摘要: The invention relates to a dual-threshold-voltage two-port sub-threshold SRAM cell apparatus. The above-mentioned apparatus comprises a first inverter, a second inverter, an access transistor and a read buffer. The first inverter and the second inverter include a plurality of first operating elements and a plurality of second operating elements for storing data. The access transistor is coupled to the first inverter and the second inverter, wherein the first operating elements and the second operating elements are high threshold voltage operating elements and the access transistor is low threshold voltage operating transistor. The read buffer is used for performing a read operation.
官方說明文件#: G11C007/00
G11C008/16
URI: http://hdl.handle.net/11536/105393
專利國: USA
專利號碼: 20100172194
Appears in Collections:Patents


Files in This Item:

  1. 20100172194.pdf