標題: GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same
作者: Chang, Edward Yi
Lu, Chung-Yu
公開日期: 10-Mar-2011
摘要: A GaN HEMT with Schottky gate is disclosed. The GaN HEMT sequentially has a GaN layer, an AlGaN layer, and a Schottky gate on a substrate, and a source and a drain on two sides of the Schottky gate. The Schottky gate is made by a material of nitrogen-rich tungsten nitride, which has a nitrogen content of about 0.5 molar ratio.
官方說明文件#: H01L029/20
H01L029/778
H01L021/335
URI: http://hdl.handle.net/11536/105329
專利國: USA
專利號碼: 20110057196
Appears in Collections:Patents


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  1. 20110057196.pdf