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dc.contributor.authorChang, Lien_US
dc.contributor.authorHo, Yen-Tengen_US
dc.date.accessioned2014-12-16T06:15:26Z-
dc.date.available2014-12-16T06:15:26Z-
dc.date.issued2011-03-17en_US
dc.identifier.govdocH01L029/22zh_TW
dc.identifier.govdocH01L021/34zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.govdocH01L029/20zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105323-
dc.description.abstractThe present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrateszh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20110062437zh_TW
Appears in Collections:Patents


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