標題: Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
作者: Chang, Li
Ho, Yen-Teng
公開日期: 17-三月-2011
摘要: The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.
官方說明文件#: H01L029/22
H01L021/34
H01L021/20
H01L029/20
URI: http://hdl.handle.net/11536/105323
專利國: USA
專利號碼: 20110062437
顯示於類別:專利資料


文件中的檔案:

  1. 20110062437.pdf