Title: High-performance polycrystalline-silicon TFT by heat-retaining enhanced lateral crystallization
Authors: Liu, Po-Tsun
Wu, Hsing-Hua
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
Keywords: excimer laser crystallization (ELC);heat-retaining enhanced crystallization (H-REC);thin-film transistor (TFT)
Issue Date: 1-Aug-2007
Abstract: High-performance low-temperature polycrystalline-silicon thin-film transistors (TFTs) have been fabricated by heat-retaining enhanced crystallization (H-REC). In the H-REC technology, a heat-retaining capping layer (HRL) is applied on the prepattern amorphous silicon islands to slow down the heat dissipation effectively. It thereby retains long duration of melting process and further enhances poly-Si-grain lateral growth. With a single shot of laser irradiation, the location-controllable poly-Si active layer with 7-mu m length of grain size can be formed successfully. In addition, in this letter, the H-REC poly-Si TFT with dual gates is studied to enhanced electrical performance and stability.
URI: http://dx.doi.org/10.1109/LED.2007.900856
http://hdl.handle.net/11536/10529
ISSN: 0741-3106
DOI: 10.1109/LED.2007.900856
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 8
Begin Page: 722
End Page: 724
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