標題: METAL-GATE/HIGH-k/GE MOSFET WITH LASER ANNEALING AND FABRICATION METHOD THEREOF
作者: CHIN ALBERT
公開日期: 7-Feb-2013
摘要: The present invention discloses a metal-gate/high-κ/Ge MOSFET with laser annealing and a fabrication method thereof. The fabrication method comprises the following steps: forming a substrate; implanting a source area and a drain area on the substrate; activating the source area and the drain area by first laser light; depositing gate dielectric material on the substrate; annealing high-κ dielectric material by second laser light; and forming a metal gate on the high-κ dielectric material.
官方說明文件#: H01L029/78
H01L021/336
URI: http://hdl.handle.net/11536/105080
專利國: USA
專利號碼: 20130032898
Appears in Collections:Patents


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  1. 20130032898.pdf