標題: MULTI-BIT RESISTIVE-SWITCHING MEMORY CELL AND ARRAY
作者: HOU TUO-HUNG
WU SHIH-CHIEH
公開日期: 16-May-2013
摘要: This invention proposes a multi-bit resistive-switching memory cell and array thereof. Multiple conduction paths are formed on each memory cell and independent of each other, and each conduction path can be in a high-resistance or low-resistance state, so as to form a multi-bit resistive-switching memory cell. A memory cell array can be formed by arranging a plurality of multi-bit resistive-switching memory cells, and the memory cell array provides a simple, high density, high performance and cost-efficient proposal.
官方說明文件#: H01L045/00
URI: http://hdl.handle.net/11536/105052
專利國: USA
專利號碼: 20130119340
Appears in Collections:Patents


Files in This Item:

  1. 20130119340.pdf