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dc.contributor.author張翼en_US
dc.contributor.author蕭佑霖en_US
dc.contributor.author呂榮淇en_US
dc.date.accessioned2014-12-16T06:14:50Z-
dc.date.available2014-12-16T06:14:50Z-
dc.date.issued2013-11-01en_US
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.govdocH01L029/205zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104953-
dc.description.abstract一種具有氮化鎵層的多層結構基板之製法,其係先在承載板上形成具有複數開孔之網狀層,並於該開孔內的承載板上依序形成緩衝層、三層不同鋁濃度之氮化鋁鎵層與氮化鎵層。本發明之三層不同鋁濃度之氮化鋁鎵層係能有效釋放應力、減少氮化鎵層表面裂痕與控制內部缺陷,因此可形成較大面積、較大厚度、無裂痕且較高品質的氮化鎵層,進而有利於高效能電子元件的製作。本發明復提供一種具有氮化鎵層的多層結構基板。zh_TW
dc.language.isozh_TWen_US
dc.title具有氮化鎵層的多層結構基板及其製法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI414004zh_TW
Appears in Collections:Patents


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