標題: Thickness scaling and reliability comparison for the inter-poly high-kappa dielectrics
作者: Chen, Yung-Yu
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-(kappa) dielectric;inter-poly dielectric (IPD);metal-organic chemical vapor deposition (MOCVD)
公開日期: 1-Aug-2007
摘要: In this letter, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with conventional oxide/nitride/oxide (ONO) IPD. Regardless of deposition tools, drastic leakage current reduction and reliability improvement have been demonstrated by replacing ONO IPD with high-permittivity (high-kappa) IPDs, which is suitable for mass production applications in the future. Moreover, metal-organic chemical vapor deposition (MOCVD) can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using the MOCVD, the charge-to-breakdown (Q(BD)) can be significantly improved, in addition to enhanced breakdown voltage and effective breakdown field-Our results clearly demonstrate that high-kappa IPD, particularly deposited by MOCVD, possesses great potential for next-generation stacked-gate Flash memories.
URI: http://dx.doi.org/10.1109/LED.2007.901590
http://hdl.handle.net/11536/10490
ISSN: 0741-3106
DOI: 10.1109/LED.2007.901590
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 8
起始頁: 700
結束頁: 702
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