標題: Enhanced GaN Transistor and the Forming Method Thereof
作者: CHANG Yi
LIN Yueh-Chin
WANG Huan-Chung
公開日期: 27-Nov-2014
摘要: An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.
官方說明文件#: H01L029/778
H01L029/205
H01L029/20
H01L029/66
URI: http://hdl.handle.net/11536/104859
專利國: USA
專利號碼: 20140346523
Appears in Collections:Patents


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  1. 20140346523.pdf