標題: Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator
作者: Zan, Hsiao-Wen
Yen, Kuo-Hsi
Liu, Pu-Kuan
Ku, Kuo-Hsin
Chen, Chien-Hsun
Hwang, Jennchang
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: OTFTs;AIN;pentacene;high-k;sputtering;contact angle;surface energy
公開日期: 1-Aug-2007
摘要: This paper reports on the low-voltage (< 5 V) pentacene-based organic thin film transistors (OTFTs) with a hydrophobic aluminum nitride (AlN) gate-dielectric. In this work, a thin (about 50 nm), smooth (roughness about 0.18 nm) and low-leakage AlN gate dielectric is obtained and characterized. The AlN film is hydrophobic and the surface free energy is similar to the organic or the polymer films. The demonstrated AlN-OTFTs were operated at a low-voltage (3-5 V). A low-threshold voltage (-2V) and an extremely low-subthreshold swing (similar to 170 mV/dec) were also obtained. Under low-voltage operating conditions, the on/off current ratio exceeded 106, and the field effect mobility was mobility was 1.67 cm(2)/V s.(c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2006.12.001
http://hdl.handle.net/11536/10457
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2006.12.001
期刊: ORGANIC ELECTRONICS
Volume: 8
Issue: 4
起始頁: 450
結束頁: 454
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