標題: Method for manufacturing optoelectronic memory device
作者: Wei Kung-Hwa
Sheu Jeng-Tzong
Chen Chen-Chia
Chiu Mao-Yuan
公開日期: 21-Aug-2012
摘要: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.
官方說明文件#: H01L021/31
H01L021/469
H01L021/00
H01L051/40
H01L021/302
H01L021/461
URI: http://hdl.handle.net/11536/104557
專利國: USA
專利號碼: 08247265
Appears in Collections:Patents


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  1. 08247265.pdf