標題: Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal
作者: Wang, M. C.
Chang, T. C.
Liu, Po-Tsun
Xiao, R. W.
Lin, L. F.
Li, Y. Y.
Huang, F. S.
Chen, J. R.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 6-Aug-2007
摘要: The feasibility of using Cu/CuMg as a source/drain metal for the island-in amorphous silicon thin film transistors (a-Si:H TFTs) has been investigated. The issue of adhesion between the Cu film and n(+)-a-Si layer has been overcome by introducing the Cu/CuMg alloy. Furthermore, the suppression of Schottky leakage current in metal/a-Si:H structure was also observed in the island-in a-Si:H TFT. The island-in a-Si:H TFT exhibited the mobility of 0.52 cm(2)/V s, the subthreshold slope of 0.78 V/decade, and the V-th of 3.02 V. The experimental result also showed superior performance of the a-Si:H TFT with minimal loss of critical dimension and good thermal stability.
URI: http://dx.doi.org/10.1063/1.2767147
http://hdl.handle.net/11536/10451
ISSN: 0003-6951
DOI: 10.1063/1.2767147
期刊: APPLIED PHYSICS LETTERS
Volume: 91
Issue: 6
結束頁: 
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