標題: Method for measuring optoelectronic memory device
作者: Wei Kung-Hwa
Sheu Jeng-Tzong
Chen Chen-Chia
Chiu Mao-Yuan
公開日期: 5-Mar-2013
摘要: A method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.
官方說明文件#: G01R031/26
H01L021/66
H01L021/00
H01L051/40
URI: http://hdl.handle.net/11536/104503
專利國: USA
專利號碼: 08389302
Appears in Collections:Patents


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  1. 08389302.pdf