標題: Multi-bit resistive-switching memory cell and array
作者: Hou Tuo-Hung
Wu Shih-Chieh
公開日期: 1-Apr-2014
摘要: This invention proposes a multi-bit resistive-switching memory cell and array thereof. Multiple conduction paths are formed on each memory cell and independent of each other, and each conduction path can be in a high-resistance or low-resistance state, so as to form a multi-bit resistive-switching memory cell. A memory cell array can be formed by arranging a plurality of multi-bit resistive-switching memory cells, and the memory cell array provides a simple, high density, high performance and cost-efficient proposal.
官方說明文件#: G11C007/22
URI: http://hdl.handle.net/11536/104395
專利國: USA
專利號碼: 08687432
Appears in Collections:Patents


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  1. 08687432.pdf