Title: Coaxial transitions for CPW-to-CPW flip chip interconnects
Authors: Wu, W. C.
Chang, E. Y.
Huang, C. H.
Hsu, L. H.
Starski, J. P.
Zirath, H.
材料科學與工程學系
Department of Materials Science and Engineering
Issue Date: 16-Aug-2007
Abstract: A novel coaxial transition for CPW-to-CPW flip chip interconnect is presented and experimentally demonstrated. To realise the coaxial transition on the CPW circuit, benzocyclobutene was used as the interlayer dielectric between the vertical coaxial transition and the CPW circuit. The coaxial interconnect structure was successfully fabricated and RF characterised to 67 GHz. The structure showed excellent interconnect performance from DC up to 55 GHz with low return loss below 20 dB and low insertion loss less than 0.5 dB even when the underfill was applied to the structure.
URI: http://dx.doi.org/10.1049/el:20071696
http://hdl.handle.net/11536/10439
ISSN: 0013-5194
DOI: 10.1049/el:20071696
Journal: ELECTRONICS LETTERS
Volume: 43
Issue: 17
Begin Page: 929
End Page: 930
Appears in Collections:Articles


Files in This Item:

  1. 000249282200016.pdf